Catalyst free low temperature direct growth of carbon nanotubes

T. Uchino; K. N. Bourdakos; C. H. De Groot; P. Ashburn; S. Wang; M. E. Kiziroglou; G. D. Dilliway; D. C. Smith

doi:10.1109/NANO.2005.1500853

Catalyst free low temperature direct growth of carbon nanotubes

T. Uchino, K. N. Bourdakos, C. H. De Groot, P. Ashburn, S. Wang, M. E. Kiziroglou, G. D. Dilliway, D. C. Smith

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A metal catalyst free direct growth process has been developed for the CVD of carbon nanotubes (CNTs) on carbon implanted SiGe islands or Ge dots on Si substrates. From TEM and Raman measurements, the fabricated CNTs are identified as single-walled CNTs (SWNTs) with diameter ranging from 1.2 to 2.1 nm. Essential parts of the substrate preparation after SiGe or Ge dot growth and carbon ion implantation are a chemical oxidation and preheating at 1000°C prior to CNT growth. We believe that the lower melting point of Ge and oxidation enhanced surface decomposition assist the formation of carbon clusters.

Original language	English
Title of host publication	2005 5th IEEE Conference on Nanotechnology
Pages	857-860
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2005.1500853
State	Published - 2005
Externally published	Yes
Event	2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan Duration: Jul 11 2005 → Jul 15 2005

Publication series

Name	2005 5th IEEE Conference on Nanotechnology
Volume	2

Conference

Conference	2005 5th IEEE Conference on Nanotechnology
Country/Territory	Japan
City	Nagoya
Period	07/11/05 → 07/15/05

Keywords

CVD
Carbon nanotube
Catalyst free
SWNT
VLSI technology

Access to Document

10.1109/NANO.2005.1500853

Cite this

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title = "Catalyst free low temperature direct growth of carbon nanotubes",

abstract = "A metal catalyst free direct growth process has been developed for the CVD of carbon nanotubes (CNTs) on carbon implanted SiGe islands or Ge dots on Si substrates. From TEM and Raman measurements, the fabricated CNTs are identified as single-walled CNTs (SWNTs) with diameter ranging from 1.2 to 2.1 nm. Essential parts of the substrate preparation after SiGe or Ge dot growth and carbon ion implantation are a chemical oxidation and preheating at 1000°C prior to CNT growth. We believe that the lower melting point of Ge and oxidation enhanced surface decomposition assist the formation of carbon clusters.",

keywords = "CVD, Carbon nanotube, Catalyst free, SWNT, VLSI technology",

author = "T. Uchino and Bourdakos, {K. N.} and {De Groot}, {C. H.} and P. Ashburn and S. Wang and Kiziroglou, {M. E.} and Dilliway, {G. D.} and Smith, {D. C.}",

year = "2005",

doi = "10.1109/NANO.2005.1500853",

language = "English",

isbn = "0780391993",

series = "2005 5th IEEE Conference on Nanotechnology",

pages = "857--860",

booktitle = "2005 5th IEEE Conference on Nanotechnology",

note = "null ; Conference date: 11-07-2005 Through 15-07-2005",

}

Uchino, T, Bourdakos, KN, De Groot, CH, Ashburn, P, Wang, S, Kiziroglou, ME, Dilliway, GD & Smith, DC 2005, Catalyst free low temperature direct growth of carbon nanotubes. in 2005 5th IEEE Conference on Nanotechnology., 1500853, 2005 5th IEEE Conference on Nanotechnology, vol. 2, pp. 857-860, 2005 5th IEEE Conference on Nanotechnology, Nagoya, Japan, 07/11/05. https://doi.org/10.1109/NANO.2005.1500853

TY - GEN

T1 - Catalyst free low temperature direct growth of carbon nanotubes

AU - Uchino, T.

AU - Bourdakos, K. N.

AU - De Groot, C. H.

AU - Ashburn, P.

AU - Wang, S.

AU - Kiziroglou, M. E.

AU - Dilliway, G. D.

AU - Smith, D. C.

PY - 2005

Y1 - 2005

N2 - A metal catalyst free direct growth process has been developed for the CVD of carbon nanotubes (CNTs) on carbon implanted SiGe islands or Ge dots on Si substrates. From TEM and Raman measurements, the fabricated CNTs are identified as single-walled CNTs (SWNTs) with diameter ranging from 1.2 to 2.1 nm. Essential parts of the substrate preparation after SiGe or Ge dot growth and carbon ion implantation are a chemical oxidation and preheating at 1000°C prior to CNT growth. We believe that the lower melting point of Ge and oxidation enhanced surface decomposition assist the formation of carbon clusters.

AB - A metal catalyst free direct growth process has been developed for the CVD of carbon nanotubes (CNTs) on carbon implanted SiGe islands or Ge dots on Si substrates. From TEM and Raman measurements, the fabricated CNTs are identified as single-walled CNTs (SWNTs) with diameter ranging from 1.2 to 2.1 nm. Essential parts of the substrate preparation after SiGe or Ge dot growth and carbon ion implantation are a chemical oxidation and preheating at 1000°C prior to CNT growth. We believe that the lower melting point of Ge and oxidation enhanced surface decomposition assist the formation of carbon clusters.

KW - CVD

KW - Carbon nanotube

KW - Catalyst free

KW - SWNT

KW - VLSI technology

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U2 - 10.1109/NANO.2005.1500853

DO - 10.1109/NANO.2005.1500853

M3 - Conference contribution

AN - SCOPUS:33746906710

SN - 0780391993

SN - 9780780391994

T3 - 2005 5th IEEE Conference on Nanotechnology

SP - 857

EP - 860

BT - 2005 5th IEEE Conference on Nanotechnology

Y2 - 11 July 2005 through 15 July 2005

ER -

Catalyst free low temperature direct growth of carbon nanotubes

Abstract

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Conference

Keywords

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