Chemical vapor deposition of conformal alumina thin films

Deposition of highly conformal alumina thin films has been carried out by hydrolysis of the liquid alane precursor, AlH₃(NMe₂Et). Deposition onto Si wafers, quartz and carbon fibers were all carried out utilizing a hot-wall atmospheric pressure chemical vapor deposition (APCVD) system, while deposition onto ceramic particles was accomplished in a simple fluidized-bed APCVD reactor. Films were characterized by SEM, microprobe and electrical conductivity measurements. Growth rates were on the order of 40 - 80 angstrom.min^-1 at 165°C. The conformality of the films was illustrated using silicon wafers that were etched prior to deposition.