Chemical vapor deposition of GaP and GaAs thin films from [ ⁿBu₂Ga(μ- e ^tBu₂) ₂GaⁿBu₂] (E = P or As) and Ga(P ^tBu₂)₃

Chemistry

• Liquid Film 100%
• Scanning Electron Microscopy-Energy Dispersive X-Ray 40%
• Raman Spectroscopy 40%
• Crystalline Material 40%
• X-Ray Photoelectron Spectroscopy 40%
• Supercritical 20%
• Luminiscence Type 20%
• Hexane 20%
• Atomic Force Microscopy 20%
• Photoluminescence 20%
• Nanowire 20%
• Nanorod 20%
• Microcrystallites 20%
• Surface 20%
• Phase Composition 20%
• Chemical Reaction Reagent 20%
• Reaction Temperature 20%
• Degradation 20%
• Solvent 20%
• Chemical Vapor Deposition 20%
• Carbon 20%
• X-Ray Diffraction 20%
• Carbon Dioxide 20%
• Silicon Dioxide 20%
• Gallium 20%

Biochemistry, Genetics and Molecular Biology

• Vapor 80%
• Hypobarism 60%
• Precursor 40%
• Morphology 20%
• Degradation 20%
• X Ray Diffraction 20%
• Luminescence 20%
• Photoluminescence 20%
• Liquid 20%
• Surface Property 20%
• Temperature 20%
• Solvent 20%
• Atomic Force Microscopy 20%