CMOS compatible growth of carbon nanotubes and their application in field-effect transistors

T. Uchino, G. N. Ayre, D. C. Smith, J. L. Hutchison, C. H. De Groot, P. Ashburn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is presented. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode (RBM) peaks and the absence of the disorder induced D-band, indicating single walled CNTs (SWNTs) with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/decade.

Original languageEnglish
Title of host publicationCarbon Nanotubes, Graphene and Related Nanostructures
Pages197-202
Number of pages6
DOIs
StatePublished - 2012
Externally publishedYes
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2011Dec 2 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1407
ISSN (Print)0272-9172

Conference

Conference2011 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period11/28/1112/2/11

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