Transistors are approaching the sub-10nm regime. Due to extensive scaling of devices, the leakage currents are also increasing. FinFETs are also being scaled to 14 nm. To further push the limits of scaling and decrease leakage currents, Dopingless FET (DL-FET) transistors were introduced. DL-FETs show a promising decrease in leakage with low power consumption. An application using these devices, a hybrid oscillator arbiter physical unclonable function (PUF) using DL-FETs is presented here. Two different designs, one speed optimized and one power optimized are presented for different designs such as low power and also high performance. A comparative analysis of the DL-FET based PUF and FinFET based PUF is presented. The DL-FET PUF results in a 30% decrease in average power consumption compared to FinFETs. To the best of the authors' knowledge, the current paper is the first in exploring PUF realization using DL-FETs.