Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes

T. Uchino; F. Shimpo; T. Kawashima; G. N. Ayre; D. C. Smith; C. H. De Groot; P. Ashburn

doi:10.1063/1.4829155

Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes

T. Uchino, F. Shimpo, T. Kawashima, G. N. Ayre, D. C. Smith, C. H. De Groot, P. Ashburn

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A detailed study of the electrical transport properties of Pd contacted carbon nanotube (CNT)/Si heterojunctions is presented. The CNT with a diameter ranging from 1.2 to 2.0 nm on n-type Si substrates showed rectifying behavior with the ideality factor of 1.1-2.2 and turn on voltage of 0.05-0.34 V. The current-voltage characteristics of the CNT/n⁺-Si diodes were investigated in the temperature range from 50 to 300 K. The transition from thermionic emission to tunneling process was seen in the forward current around 150 K and the Schottky barrier height at Pd/CNT interface is estimated to be 0.3-0.5 eV.

Original language	English
Article number	193111
Journal	Applied Physics Letters
Volume	103
Issue number	19
DOIs	https://doi.org/10.1063/1.4829155
State	Published - Nov 4 2013
Externally published	Yes

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title = "Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes",

abstract = "A detailed study of the electrical transport properties of Pd contacted carbon nanotube (CNT)/Si heterojunctions is presented. The CNT with a diameter ranging from 1.2 to 2.0 nm on n-type Si substrates showed rectifying behavior with the ideality factor of 1.1-2.2 and turn on voltage of 0.05-0.34 V. The current-voltage characteristics of the CNT/n+-Si diodes were investigated in the temperature range from 50 to 300 K. The transition from thermionic emission to tunneling process was seen in the forward current around 150 K and the Schottky barrier height at Pd/CNT interface is estimated to be 0.3-0.5 eV.",

author = "T. Uchino and F. Shimpo and T. Kawashima and Ayre, {G. N.} and Smith, {D. C.} and {De Groot}, {C. H.} and P. Ashburn",

note = "Funding Information: The authors would like to acknowledge EPSRC for supporting this work. Electrical measurements were carried out under the cooperative research project program of the Research Institute of Electrical Communication, Tohoku University. ",

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doi = "10.1063/1.4829155",

language = "English",

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T1 - Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes

AU - Uchino, T.

AU - Shimpo, F.

AU - Kawashima, T.

AU - Ayre, G. N.

AU - Smith, D. C.

AU - De Groot, C. H.

AU - Ashburn, P.

N1 - Funding Information: The authors would like to acknowledge EPSRC for supporting this work. Electrical measurements were carried out under the cooperative research project program of the Research Institute of Electrical Communication, Tohoku University.

PY - 2013/11/4

Y1 - 2013/11/4

N2 - A detailed study of the electrical transport properties of Pd contacted carbon nanotube (CNT)/Si heterojunctions is presented. The CNT with a diameter ranging from 1.2 to 2.0 nm on n-type Si substrates showed rectifying behavior with the ideality factor of 1.1-2.2 and turn on voltage of 0.05-0.34 V. The current-voltage characteristics of the CNT/n+-Si diodes were investigated in the temperature range from 50 to 300 K. The transition from thermionic emission to tunneling process was seen in the forward current around 150 K and the Schottky barrier height at Pd/CNT interface is estimated to be 0.3-0.5 eV.

AB - A detailed study of the electrical transport properties of Pd contacted carbon nanotube (CNT)/Si heterojunctions is presented. The CNT with a diameter ranging from 1.2 to 2.0 nm on n-type Si substrates showed rectifying behavior with the ideality factor of 1.1-2.2 and turn on voltage of 0.05-0.34 V. The current-voltage characteristics of the CNT/n+-Si diodes were investigated in the temperature range from 50 to 300 K. The transition from thermionic emission to tunneling process was seen in the forward current around 150 K and the Schottky barrier height at Pd/CNT interface is estimated to be 0.3-0.5 eV.

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U2 - 10.1063/1.4829155

DO - 10.1063/1.4829155

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JO - Applied Physics Letters

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ER -

Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes

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