Electrochemical and biological response of titanium (cp-Ti) after silicon ion implantation

K. M. Deen, A. Farooq, M. Rizwan, A. Ahmad, W. Haider

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Purpose: This study/paper aims to the authors applied low “Si” ions dose over cp-Ti-2, and the potent dose level was optimized for adequate corrosion resistance and effective proliferation of stem cells. Design/methodology/approach: The cp-Ti surface was modified by silicon (Si) ions beam at 0.5 MeV in a Pelletron accelerator. Three different ion doses were applied to the polished samples, and the surface was characterized by XRD and AFM analysis. Findings: At moderate “Si” ion dose (6.54 × 1012 ions-cm−2), the potential shifted to a noble value. The small “icorr” (1.22 µA.cm−2) and relatively large charge transfer resistance (43.548 kΩ-cm2) in the ringer‘s lactate solution was confirmed through Potentiodynamic polarization and impedance spectroscopy analysis. Compared to cp-Ti and other doses, this dose level also provided the effective proliferation of mesenchymal stem cells. Originality/value: The dosage levels used were different to previous work and provided the effective proliferation of mesenchymal stem cells.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalAnti-Corrosion Methods and Materials
Volume67
Issue number1
DOIs
StatePublished - Jan 8 2020

Keywords

  • Corrosion
  • Ion implantation
  • Metals
  • Surface

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