Fe/Ge catalyzed carbon nanotube growth on HfO2 for nano-sensor applications

T. Uchino, G. N. Ayre, D. C. Smith, J. L. Hutchison, C. H. De Groot, P. Ashburn

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A carbon nanotube (CNT) growth process on HfO2 is reported for the first time for application in nano-sensors, The process uses a combination of Ge nanoparticles and ferric nitrate dispersion and achieves an increase in CNT density from 0.15 to 6.2 μm length/μm2 compared with the use of ferric nitrate dispersion alone. The growth process is validated by the fabrication of back-gate CNT field-effect transistors (CNTFETs) using AI source/drain (S/D) contacts and a H2 anneal at 400°C. The transistors exhibit p-FET behavior with an Ion/Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec. These results are rather surprising, as earlier research in the literature on CNTFETs with AI S/D electrodes showed n-FET behavior. The p-FET behavior is shown to be due to the H2 anneal, which we ascribe to the smaller electron affinity of hydrogenised CNTs. Measurements of the temperature dependence of the drain current show low Schottky barrier height AI S/D contacts after a H2 anneal, which tends to confirm this explanation.

Original languageEnglish
Title of host publicationESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages197-200
Number of pages4
DOIs
StatePublished - 2009
Externally publishedYes
Event39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece
Duration: Sep 14 2009Sep 18 2009

Publication series

NameESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Conference

Conference39th European Solid-State Device Research Conference, ESSDERC 2009
Country/TerritoryGreece
CityAthens
Period09/14/0909/18/09

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