Fe/Ge catalyzed carbon nanotube growth on HfO2 for nano-sensor applications

T. Uchino; G. N. Ayre; D. C. Smith; J. L. Hutchison; C. H. De Groot; P. Ashburn

doi:10.1109/ESSDERC.2009.5331539

Fe/Ge catalyzed carbon nanotube growth on HfO₂ for nano-sensor applications

T. Uchino, G. N. Ayre, D. C. Smith, J. L. Hutchison, C. H. De Groot, P. Ashburn

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A carbon nanotube (CNT) growth process on HfO₂ is reported for the first time for application in nano-sensors, The process uses a combination of Ge nanoparticles and ferric nitrate dispersion and achieves an increase in CNT density from 0.15 to 6.2 μm length/μm² compared with the use of ferric nitrate dispersion alone. The growth process is validated by the fabrication of back-gate CNT field-effect transistors (CNTFETs) using AI source/drain (S/D) contacts and a H₂ anneal at 400°C. The transistors exhibit p-FET behavior with an I_on/I_off ratio of 10⁵ and a steep sub-threshold slope of 130 mV/dec. These results are rather surprising, as earlier research in the literature on CNTFETs with AI S/D electrodes showed n-FET behavior. The p-FET behavior is shown to be due to the H₂ anneal, which we ascribe to the smaller electron affinity of hydrogenised CNTs. Measurements of the temperature dependence of the drain current show low Schottky barrier height AI S/D contacts after a H₂ anneal, which tends to confirm this explanation.

Original language	English
Title of host publication	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages	197-200
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2009.5331539
State	Published - 2009
Externally published	Yes
Event	39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece Duration: Sep 14 2009 → Sep 18 2009

Publication series

Name	ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Conference

Conference	39th European Solid-State Device Research Conference, ESSDERC 2009
Country/Territory	Greece
City	Athens
Period	09/14/09 → 09/18/09

Access to Document

10.1109/ESSDERC.2009.5331539

Cite this

Uchino, T., Ayre, G. N., Smith, D. C., Hutchison, J. L., De Groot, C. H., & Ashburn, P. (2009). Fe/Ge catalyzed carbon nanotube growth on HfO₂ for nano-sensor applications. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (pp. 197-200). [5331539] (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331539

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title = "Fe/Ge catalyzed carbon nanotube growth on HfO2 for nano-sensor applications",

abstract = "A carbon nanotube (CNT) growth process on HfO2 is reported for the first time for application in nano-sensors, The process uses a combination of Ge nanoparticles and ferric nitrate dispersion and achieves an increase in CNT density from 0.15 to 6.2 μm length/μm2 compared with the use of ferric nitrate dispersion alone. The growth process is validated by the fabrication of back-gate CNT field-effect transistors (CNTFETs) using AI source/drain (S/D) contacts and a H2 anneal at 400°C. The transistors exhibit p-FET behavior with an Ion/Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec. These results are rather surprising, as earlier research in the literature on CNTFETs with AI S/D electrodes showed n-FET behavior. The p-FET behavior is shown to be due to the H2 anneal, which we ascribe to the smaller electron affinity of hydrogenised CNTs. Measurements of the temperature dependence of the drain current show low Schottky barrier height AI S/D contacts after a H2 anneal, which tends to confirm this explanation.",

author = "T. Uchino and Ayre, {G. N.} and Smith, {D. C.} and Hutchison, {J. L.} and {De Groot}, {C. H.} and P. Ashburn",

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Uchino, T, Ayre, GN, Smith, DC, Hutchison, JL, De Groot, CH & Ashburn, P 2009, Fe/Ge catalyzed carbon nanotube growth on HfO₂ for nano-sensor applications. in ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference., 5331539, ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, pp. 197-200, 39th European Solid-State Device Research Conference, ESSDERC 2009, Athens, Greece, 09/14/09. https://doi.org/10.1109/ESSDERC.2009.5331539

Fe/Ge catalyzed carbon nanotube growth on HfO₂ for nano-sensor applications. / Uchino, T.; Ayre, G. N.; Smith, D. C. et al.

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 197-200 5331539 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Uchino T, Ayre GN, Smith DC, Hutchison JL, De Groot CH, Ashburn P. Fe/Ge catalyzed carbon nanotube growth on HfO₂ for nano-sensor applications. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 197-200. 5331539. (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2009.5331539