First principles derivation of microcavity semiconductor laser threshold condition and its application to FDTD active cavity modeling

Adam Mock

doi:10.1364/JOSAB.27.002262

First principles derivation of microcavity semiconductor laser threshold condition and its application to FDTD active cavity modeling

Adam Mock

Engineering & Technology, School Of

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

A laser threshold condition derived from the instantaneous form of Maxwell's equations is presented. This derivation incorporates the passive quality factor of the resonator and is particularly amenable to semiconductor microcavity lasers. The optical confinement factor is derived and compared to previous reports. The threshold condition derived here is compared to the results of active cavity finite-difference time-domain calculations, and excellent agreement is found.

Original language	English
Pages (from-to)	2262-2272
Number of pages	11
Journal	Journal of the Optical Society of America B: Optical Physics
Volume	27
Issue number	11
DOIs	https://doi.org/10.1364/JOSAB.27.002262
State	Published - Nov 2010

Access to Document

10.1364/JOSAB.27.002262

Cite this

@article{c9df785111904e54a9f51b5e235520d9,

title = "First principles derivation of microcavity semiconductor laser threshold condition and its application to FDTD active cavity modeling",

abstract = "A laser threshold condition derived from the instantaneous form of Maxwell's equations is presented. This derivation incorporates the passive quality factor of the resonator and is particularly amenable to semiconductor microcavity lasers. The optical confinement factor is derived and compared to previous reports. The threshold condition derived here is compared to the results of active cavity finite-difference time-domain calculations, and excellent agreement is found.",

author = "Adam Mock",

year = "2010",

month = nov,

doi = "10.1364/JOSAB.27.002262",

language = "English",

volume = "27",

pages = "2262--2272",

journal = "Journal of the Optical Society of America B: Optical Physics",

issn = "0740-3224",

number = "11",

}

TY - JOUR

T1 - First principles derivation of microcavity semiconductor laser threshold condition and its application to FDTD active cavity modeling

AU - Mock, Adam

PY - 2010/11

Y1 - 2010/11

N2 - A laser threshold condition derived from the instantaneous form of Maxwell's equations is presented. This derivation incorporates the passive quality factor of the resonator and is particularly amenable to semiconductor microcavity lasers. The optical confinement factor is derived and compared to previous reports. The threshold condition derived here is compared to the results of active cavity finite-difference time-domain calculations, and excellent agreement is found.

AB - A laser threshold condition derived from the instantaneous form of Maxwell's equations is presented. This derivation incorporates the passive quality factor of the resonator and is particularly amenable to semiconductor microcavity lasers. The optical confinement factor is derived and compared to previous reports. The threshold condition derived here is compared to the results of active cavity finite-difference time-domain calculations, and excellent agreement is found.

UR - http://www.scopus.com/inward/record.url?scp=78149363770&partnerID=8YFLogxK

U2 - 10.1364/JOSAB.27.002262

DO - 10.1364/JOSAB.27.002262

M3 - Article

AN - SCOPUS:78149363770

SN - 0740-3224

VL - 27

SP - 2262

EP - 2272

JO - Journal of the Optical Society of America B: Optical Physics

JF - Journal of the Optical Society of America B: Optical Physics

IS - 11

ER -

First principles derivation of microcavity semiconductor laser threshold condition and its application to FDTD active cavity modeling

Abstract

Access to Document

Other files and links

Fingerprint

Cite this