First principles derivation of microcavity semiconductor laser threshold condition and its application to FDTD active cavity modeling

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Abstract

A laser threshold condition derived from the instantaneous form of Maxwell's equations is presented. This derivation incorporates the passive quality factor of the resonator and is particularly amenable to semiconductor microcavity lasers. The optical confinement factor is derived and compared to previous reports. The threshold condition derived here is compared to the results of active cavity finite-difference time-domain calculations, and excellent agreement is found.

Original languageEnglish
Pages (from-to)2262-2272
Number of pages11
JournalJournal of the Optical Society of America B: Optical Physics
Volume27
Issue number11
DOIs
StatePublished - Nov 2010

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