Ge-catalyzed vapour-liquid-solid growth of carbon nanotubes

T. Uchino, C. H. De Groot, P. Ashburn, K. N. Bourdakos, D. C. Smith

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The interest in carbon nanotubes (CNTs) for electronic applications is predominantly based on the outstanding properties of single walled CNTs, which include ballistic transport and high thermal conductivity. However, there is a need to avoid the standard metal catalysts used for CNT growth, which act as "lifetime killers" for silicon devices. Here we present a Ge catalyst growth method of CNTs based on chemical vapour deposition of CNTs on SiGe and Ge dots on Si substrates. From Raman measurements, the grown CNTs are identified as single walled CNTs (SWNTs) with diameters ranging from 1.6 to 2.1 nm. We present extensive scanning electron microscopy and atomic force microscopy characterisation of the effect of each stage in the growth process. We believe that pre-growth stages lead to the formation of Ge nanoparticle seeds and we propose a vapour-liquid-solid growth mechanism.

Original languageEnglish
Title of host publicationESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages214-217
Number of pages4
ISBN (Print)1424403014, 9781424403011
DOIs
StatePublished - 2006
Externally publishedYes
EventESSDERC 2006 - 36th European Solid-State Device Research Conference - Montreux, Switzerland
Duration: Sep 19 2006Sep 21 2006

Publication series

NameESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Conference

ConferenceESSDERC 2006 - 36th European Solid-State Device Research Conference
Country/TerritorySwitzerland
CityMontreux
Period09/19/0609/21/06

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