Silicon-based Static Random Access Memory (SRAM) has not been keeping pace with technology trends due to the limited improvements in power, performance and density. This paper explores graphene based SRAM as a potential replacement of silicon SRAM for future digital electronics. Due to its higher current on-To-off ratio, the graphene nanoribbon field effect transistor (GNRFET) has been considered in this paper. In the nanometer regime, process variation is not only inevitable but also very pronounced. To mitigate its effects as much as possible, the Schottky-Barrier type GNRFET is considered which presents lower variation in its characteristics due to doping variation. The results show that graphene nanoribbon has a great potential in digital circuit design. The GNRFET based SRAM design presented in this paper leads to significantly lower power consumption, approximately 93% compared to 45 nm silicon technology. This upper bound can be quite achievable as the fabrication technology of graphene reaches maturity.