Graphene nanoribbon field effect transistor based ultra-low energy SRAM design

Shital Joshi, Saraju P. Mohanty, Elias Kougianos, Venkata P. Yanambaka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

12 Scopus citations

Abstract

Silicon-based Static Random Access Memory (SRAM) has not been keeping pace with technology trends due to the limited improvements in power, performance and density. This paper explores graphene based SRAM as a potential replacement of silicon SRAM for future digital electronics. Due to its higher current on-To-off ratio, the graphene nanoribbon field effect transistor (GNRFET) has been considered in this paper. In the nanometer regime, process variation is not only inevitable but also very pronounced. To mitigate its effects as much as possible, the Schottky-Barrier type GNRFET is considered which presents lower variation in its characteristics due to doping variation. The results show that graphene nanoribbon has a great potential in digital circuit design. The GNRFET based SRAM design presented in this paper leads to significantly lower power consumption, approximately 93% compared to 45 nm silicon technology. This upper bound can be quite achievable as the fabrication technology of graphene reaches maturity.

Original languageEnglish
Title of host publicationProceedings - 2016 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages76-79
Number of pages4
ISBN (Electronic)9781509061693
DOIs
StatePublished - Jan 23 2017
Event2nd IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016 - Gwalior, Madhya Pradesh, India
Duration: Dec 19 2016Dec 21 2016

Publication series

NameProceedings - 2016 IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016

Conference

Conference2nd IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016
Country/TerritoryIndia
CityGwalior, Madhya Pradesh
Period12/19/1612/21/16

Keywords

  • Graphene Nanoribbon FET (GNRFET)
  • Static Random Access Memory (SRAM)
  • Ultra-Low Power Design

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