Growth of carbon nanotubes on HfO2 towards highly sensitive nano-sensors

Takashi Uchino; Greg N. Ayre; David C. Smith; John L. Hutchison; C. H. De Groot; Peter Ashburn

doi:10.1143/JJAP.49.04DN11

Growth of carbon nanotubes on HfO₂ towards highly sensitive nano-sensors

Takashi Uchino, Greg N. Ayre, David C. Smith, John L. Hutchison, C. H. De Groot, Peter Ashburn

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Carbon nanotube (CNT) growth on HfO₂ is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 μm length/μm² compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellentp-type behavior with an /on//off ratio of 10⁵ and a steep sub-threshold slope of 130 mV/dec.

Original language	English
Article number	04DN11
Journal	Japanese Journal of Applied Physics
Volume	49
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.04DN11
State	Published - Apr 2010
Externally published	Yes

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abstract = "Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 μm length/μm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellentp-type behavior with an /on//off ratio of 105 and a steep sub-threshold slope of 130 mV/dec.",

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AU - De Groot, C. H.

AU - Ashburn, Peter

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AB - Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 μm length/μm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellentp-type behavior with an /on//off ratio of 105 and a steep sub-threshold slope of 130 mV/dec.

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Growth of carbon nanotubes on HfO₂ towards highly sensitive nano-sensors

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