Impact of vacancy clusters on characteristic resistance change of nonstoichiometric strontium titanate nano-film

Yong Su Kim; Jiyeon Kim; Moon Jee Yoon; Chang Hee Sohn; Shin Buhm Lee; Daesu Lee; Byung Chul Jeon; Hyang Keun Yoo; Tae Won Noh; Aaron Bostwick; Eli Rotenberg; Jaejun Yu; Sang Don Bu; Bongjin Simon Mun

doi:10.1063/1.4860961

Impact of vacancy clusters on characteristic resistance change of nonstoichiometric strontium titanate nano-film

Yong Su Kim, Jiyeon Kim, Moon Jee Yoon, Chang Hee Sohn, Shin Buhm Lee, Daesu Lee, Byung Chul Jeon, Hyang Keun Yoo, Tae Won Noh, Aaron Bostwick, Eli Rotenberg, Jaejun Yu, Sang Don Bu, Bongjin Simon Mun

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In practical applications to bipolar resistance switching (BRS) memory devices with enhanced performance and high-scalability, oxide materials are commonly fabricated to highly nonstoichiometric and nanometer scale films. In this study, we fabricated ultrathin strontium titanate film, which shows two types of BRS behavior. By using micro-beam X-ray photoemission spectroscopy, the changes of core-level spectra depending on the resistance states are spatially resolved. Experimental and calculated results demonstrated that the fundamental switching mechanism in the two types of BRS is originated from the migration of anion and cation vacancies and the formation of insulating vacancy clusters near vicinity of the interface.

Original language	English
Article number	013501
Journal	Applied Physics Letters
Volume	104
Issue number	1
DOIs	https://doi.org/10.1063/1.4860961
State	Published - Jan 6 2014
Externally published	Yes

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Su Kim, Y., Kim, J., Jee Yoon, M., Hee Sohn, C., Buhm Lee, S., Lee, D., Chul Jeon, B., Keun Yoo, H., Won Noh, T., Bostwick, A., Rotenberg, E., Yu, J., Don Bu, S., & Simon Mun, B. (2014). Impact of vacancy clusters on characteristic resistance change of nonstoichiometric strontium titanate nano-film. Applied Physics Letters, 104(1), Article 013501. https://doi.org/10.1063/1.4860961

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title = "Impact of vacancy clusters on characteristic resistance change of nonstoichiometric strontium titanate nano-film",

abstract = "In practical applications to bipolar resistance switching (BRS) memory devices with enhanced performance and high-scalability, oxide materials are commonly fabricated to highly nonstoichiometric and nanometer scale films. In this study, we fabricated ultrathin strontium titanate film, which shows two types of BRS behavior. By using micro-beam X-ray photoemission spectroscopy, the changes of core-level spectra depending on the resistance states are spatially resolved. Experimental and calculated results demonstrated that the fundamental switching mechanism in the two types of BRS is originated from the migration of anion and cation vacancies and the formation of insulating vacancy clusters near vicinity of the interface.",

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doi = "10.1063/1.4860961",

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T1 - Impact of vacancy clusters on characteristic resistance change of nonstoichiometric strontium titanate nano-film

AU - Su Kim, Yong

AU - Kim, Jiyeon

AU - Jee Yoon, Moon

AU - Hee Sohn, Chang

AU - Buhm Lee, Shin

AU - Lee, Daesu

AU - Chul Jeon, Byung

AU - Keun Yoo, Hyang

AU - Won Noh, Tae

AU - Bostwick, Aaron

AU - Rotenberg, Eli

AU - Yu, Jaejun

AU - Don Bu, Sang

AU - Simon Mun, Bongjin

PY - 2014/1/6

Y1 - 2014/1/6

N2 - In practical applications to bipolar resistance switching (BRS) memory devices with enhanced performance and high-scalability, oxide materials are commonly fabricated to highly nonstoichiometric and nanometer scale films. In this study, we fabricated ultrathin strontium titanate film, which shows two types of BRS behavior. By using micro-beam X-ray photoemission spectroscopy, the changes of core-level spectra depending on the resistance states are spatially resolved. Experimental and calculated results demonstrated that the fundamental switching mechanism in the two types of BRS is originated from the migration of anion and cation vacancies and the formation of insulating vacancy clusters near vicinity of the interface.

AB - In practical applications to bipolar resistance switching (BRS) memory devices with enhanced performance and high-scalability, oxide materials are commonly fabricated to highly nonstoichiometric and nanometer scale films. In this study, we fabricated ultrathin strontium titanate film, which shows two types of BRS behavior. By using micro-beam X-ray photoemission spectroscopy, the changes of core-level spectra depending on the resistance states are spatially resolved. Experimental and calculated results demonstrated that the fundamental switching mechanism in the two types of BRS is originated from the migration of anion and cation vacancies and the formation of insulating vacancy clusters near vicinity of the interface.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Impact of vacancy clusters on characteristic resistance change of nonstoichiometric strontium titanate nano-film

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