Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA

M. Kokkoris, G. Perdikakis, R. Vlastou, C. T. Papadopoulos, X. A. Aslanoglou, M. Posselt, R. Grötzschel, S. Harissopulos, S. Kossionides

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Si(100) and (111) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV 19F+ ions, to a maximum fluence of approximately 1 × 1017 particles/cm2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range Ep=950-1200 keV. The reaction 19F(p,αγ)16O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature.

Original languageEnglish
Pages (from-to)623-629
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume201
Issue number4
DOIs
StatePublished - Apr 2003

Keywords

  • C-TRIM
  • Channeling
  • Fluorine profiling
  • High-energy implantation
  • Nuclear resonance
  • Resonant NRA

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