Abstract
Si(100) and (111) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV 19F+ ions, to a maximum fluence of approximately 1 × 1017 particles/cm2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range Ep=950-1200 keV. The reaction 19F(p,αγ)16O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature.
Original language | English |
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Pages (from-to) | 623-629 |
Number of pages | 7 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 201 |
Issue number | 4 |
DOIs | |
State | Published - Apr 2003 |
Keywords
- C-TRIM
- Channeling
- Fluorine profiling
- High-energy implantation
- Nuclear resonance
- Resonant NRA