Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA

M. Kokkoris; G. Perdikakis; R. Vlastou; C. T. Papadopoulos; X. A. Aslanoglou; M. Posselt; R. Grötzschel; S. Harissopulos; S. Kossionides

doi:10.1016/S0168-583X(03)00448-8

Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA

M. Kokkoris, G. Perdikakis, R. Vlastou, C. T. Papadopoulos, X. A. Aslanoglou, M. Posselt, R. Grötzschel, S. Harissopulos, S. Kossionides

Physics

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5 Scopus citations

Abstract

Si(100) and (111) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV ¹⁹F⁺ ions, to a maximum fluence of approximately 1 × 10¹⁷ particles/cm². The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range E_p=950-1200 keV. The reaction ¹⁹F(p,αγ)¹⁶O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature.

Original language	English
Pages (from-to)	623-629
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	201
Issue number	4
DOIs	https://doi.org/10.1016/S0168-583X(03)00448-8
State	Published - Apr 2003

Keywords

C-TRIM
Channeling
Fluorine profiling
High-energy implantation
Nuclear resonance
Resonant NRA

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10.1016/S0168-583X(03)00448-8

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Kokkoris, M., Perdikakis, G., Vlastou, R., Papadopoulos, C. T., Aslanoglou, X. A., Posselt, M., Grötzschel, R., Harissopulos, S., & Kossionides, S. (2003). Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 201(4), 623-629. https://doi.org/10.1016/S0168-583X(03)00448-8

Kokkoris, M. ; Perdikakis, G. ; Vlastou, R. ; Papadopoulos, C. T. ; Aslanoglou, X. A. ; Posselt, M. ; Grötzschel, R. ; Harissopulos, S. ; Kossionides, S. / Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2003 ; Vol. 201, No. 4. pp. 623-629.

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title = "Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA",

abstract = "Si(100) and (111) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV 19F+ ions, to a maximum fluence of approximately 1 × 1017 particles/cm2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range Ep=950-1200 keV. The reaction 19F(p,αγ)16O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature.",

keywords = "C-TRIM, Channeling, Fluorine profiling, High-energy implantation, Nuclear resonance, Resonant NRA",

author = "M. Kokkoris and G. Perdikakis and R. Vlastou and Papadopoulos, {C. T.} and Aslanoglou, {X. A.} and M. Posselt and R. Gr{\"o}tzschel and S. Harissopulos and S. Kossionides",

year = "2003",

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doi = "10.1016/S0168-583X(03)00448-8",

language = "English",

volume = "201",

pages = "623--629",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

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Kokkoris, M, Perdikakis, G, Vlastou, R, Papadopoulos, CT, Aslanoglou, XA, Posselt, M, Grötzschel, R, Harissopulos, S & Kossionides, S 2003, 'Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 201, no. 4, pp. 623-629. https://doi.org/10.1016/S0168-583X(03)00448-8

Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA. / Kokkoris, M.; Perdikakis, G.; Vlastou, R.; Papadopoulos, C. T.; Aslanoglou, X. A.; Posselt, M.; Grötzschel, R.; Harissopulos, S.; Kossionides, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 201, No. 4, 04.2003, p. 623-629.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA

AU - Kokkoris, M.

AU - Perdikakis, G.

AU - Vlastou, R.

AU - Papadopoulos, C. T.

AU - Aslanoglou, X. A.

AU - Posselt, M.

AU - Grötzschel, R.

AU - Harissopulos, S.

AU - Kossionides, S.

PY - 2003/4

Y1 - 2003/4

N2 - Si(100) and (111) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV 19F+ ions, to a maximum fluence of approximately 1 × 1017 particles/cm2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range Ep=950-1200 keV. The reaction 19F(p,αγ)16O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature.

AB - Si(100) and (111) crystals were irradiated in the random as well as in the channeling direction, using 5 MeV 19F+ ions, to a maximum fluence of approximately 1 × 1017 particles/cm2. The occurring deep implanted profiles were subsequently investigated using the Resonant Nuclear Reaction Analysis technique in the energy range Ep=950-1200 keV. The reaction 19F(p,αγ)16O reaction exhibits a strong resonant behavior in the above mentioned energy range, thus providing an excellent tool for the depth profiling of fluorine, yielding minimum detection limits of the order of a few ppm. The occurring profiles are analyzed with SRIM and c-TRIM codes and an attempt is made to explain the characteristics of the experimental spectra, as well as to compare with results already existing in literature.

KW - C-TRIM

KW - Channeling

KW - Fluorine profiling

KW - High-energy implantation

KW - Nuclear resonance

KW - Resonant NRA

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DO - 10.1016/S0168-583X(03)00448-8

M3 - Article

AN - SCOPUS:0037377487

VL - 201

SP - 623

EP - 629

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 4

ER -

Investigation of deep implanted fluorine channeling profiles in silicon using resonant NRA

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