Lasing characteristics of InAs quantum dot microcavity lasers as a function of temperature and wavelength

A Strong temperature dependence of microdisk lasers and photonic crystal nanocavity lasers with InAs quantum dot active regions is reported. These lasers operate at 1.3 μm at room temperature under optical pumping conditions. T_{0, microdisk} = 31 K. T_{0, photonic crystal nanocavity} = 14 K. The lasing threshold dependence on the lasing wavelength is also reported. We observe a minimum absorbed threshold pump power of 9 μW. This temperature and wavelength dependent lasing behavior is explained qualitatively by a simple model which attributes the experimental observations predominantly to surface recombination at threshold and the high quality factors of these cavities.