Local structure of random InxGa1-xAs alloys by full-profile fitting of atomic pair distribution functions

V. Petkov, S. J.L. Billinge

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The local structure of random InxGa1-xAs alloys has been refined by fitting experimental high-resolution atomic pair distribution functions with the 8-atom unit cell of the zinc-blende lattice. Both metal and As atoms have been allowed to move off their ideal positions and so the local structural disorder due to the presence of two distinct bond lengths, Ga-As and In-As, has been quantified. It has been found that most of the disorder is accommodated by the As sublattice but the disorder on metal sites is important too. This new experimental information has been incorporated into a larger, statistically representative, model of In0.5Ga0.5As structure using widely available crystallographic software.

Original languageEnglish
Pages (from-to)83-89
Number of pages7
JournalPhysica B: Condensed Matter
Volume305
Issue number1
DOIs
StatePublished - Oct 2001

Keywords

  • Atomic pair distribution
  • InGaAs
  • Local structure

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