Local structure of random InxGa1-xAs alloys by full-profile fitting of atomic pair distribution functions

V. Petkov; S. J.L. Billinge

doi:10.1016/S0921-4526(01)00551-8

Local structure of random In_xGa_1-xAs alloys by full-profile fitting of atomic pair distribution functions

V. Petkov, S. J.L. Billinge

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Abstract

The local structure of random In_xGa_1-xAs alloys has been refined by fitting experimental high-resolution atomic pair distribution functions with the 8-atom unit cell of the zinc-blende lattice. Both metal and As atoms have been allowed to move off their ideal positions and so the local structural disorder due to the presence of two distinct bond lengths, Ga-As and In-As, has been quantified. It has been found that most of the disorder is accommodated by the As sublattice but the disorder on metal sites is important too. This new experimental information has been incorporated into a larger, statistically representative, model of In_0.5Ga_0.5As structure using widely available crystallographic software.

Original language	English
Pages (from-to)	83-89
Number of pages	7
Journal	Physica B: Condensed Matter
Volume	305
Issue number	1
DOIs	https://doi.org/10.1016/S0921-4526(01)00551-8
State	Published - Oct 2001

Keywords

Atomic pair distribution
InGaAs
Local structure

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10.1016/S0921-4526(01)00551-8

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@article{3429c9a5e3cd4ff6b8b0b5e891524dc9,

title = "Local structure of random InxGa1-xAs alloys by full-profile fitting of atomic pair distribution functions",

abstract = "The local structure of random InxGa1-xAs alloys has been refined by fitting experimental high-resolution atomic pair distribution functions with the 8-atom unit cell of the zinc-blende lattice. Both metal and As atoms have been allowed to move off their ideal positions and so the local structural disorder due to the presence of two distinct bond lengths, Ga-As and In-As, has been quantified. It has been found that most of the disorder is accommodated by the As sublattice but the disorder on metal sites is important too. This new experimental information has been incorporated into a larger, statistically representative, model of In0.5Ga0.5As structure using widely available crystallographic software.",

keywords = "Atomic pair distribution, InGaAs, Local structure",

author = "V. Petkov and Billinge, {S. J.L.}",

note = "Funding Information: We would like to acknowledge the help of I.-K. Jeong and S. Kycia in collecting the data. The work was supported by the US-DOE through grant DE-FG02-97ER45651. CHESS is operated by NSF through grant DMR97-13424. ",

year = "2001",

month = oct,

doi = "10.1016/S0921-4526(01)00551-8",

language = "English",

volume = "305",

pages = "83--89",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

number = "1",

}

TY - JOUR

T1 - Local structure of random InxGa1-xAs alloys by full-profile fitting of atomic pair distribution functions

AU - Petkov, V.

AU - Billinge, S. J.L.

N1 - Funding Information: We would like to acknowledge the help of I.-K. Jeong and S. Kycia in collecting the data. The work was supported by the US-DOE through grant DE-FG02-97ER45651. CHESS is operated by NSF through grant DMR97-13424.

PY - 2001/10

Y1 - 2001/10

N2 - The local structure of random InxGa1-xAs alloys has been refined by fitting experimental high-resolution atomic pair distribution functions with the 8-atom unit cell of the zinc-blende lattice. Both metal and As atoms have been allowed to move off their ideal positions and so the local structural disorder due to the presence of two distinct bond lengths, Ga-As and In-As, has been quantified. It has been found that most of the disorder is accommodated by the As sublattice but the disorder on metal sites is important too. This new experimental information has been incorporated into a larger, statistically representative, model of In0.5Ga0.5As structure using widely available crystallographic software.

AB - The local structure of random InxGa1-xAs alloys has been refined by fitting experimental high-resolution atomic pair distribution functions with the 8-atom unit cell of the zinc-blende lattice. Both metal and As atoms have been allowed to move off their ideal positions and so the local structural disorder due to the presence of two distinct bond lengths, Ga-As and In-As, has been quantified. It has been found that most of the disorder is accommodated by the As sublattice but the disorder on metal sites is important too. This new experimental information has been incorporated into a larger, statistically representative, model of In0.5Ga0.5As structure using widely available crystallographic software.

KW - Atomic pair distribution

KW - InGaAs

KW - Local structure

UR - http://www.scopus.com/inward/record.url?scp=0035480242&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(01)00551-8

DO - 10.1016/S0921-4526(01)00551-8

M3 - Article

AN - SCOPUS:0035480242

VL - 305

SP - 83

EP - 89

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1

ER -

Local structure of random In_xGa_1-xAs alloys by full-profile fitting of atomic pair distribution functions

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Keywords

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