TY - JOUR
T1 - Mesostructured non-oxidic solids with adjustable worm-hole shaped pores
T2 - M-Ge-Q (Q = S, Se) frameworks based on tetrahedral [Ge4Q10]4- clusters
AU - Wachhold, Michael
AU - Rangan, K. Kasthuri
AU - Billinge, Simon J.L.
AU - Petkov, Valeri
AU - Heising, Joy
AU - Kanatzidis, Mercouri G.
PY - 2000
Y1 - 2000
N2 - A new class of mesostructured semiconducting materials, M-Ge-Q (Q = S,Se) were synthesized and characterized. The materials possess an amorphous, three-dimensional framework structure in which simple adamante clusters are the basic building blocks. The application of formamide led to a hexagonally ordered pore structure and a different stoichiometry, whereas, H2O/alcohol mixtures favored disordered pore structure with worm-hole character. All compounds are wide bandgap semiconductors, the Se phases showing lower values than the sulfide analogs.
AB - A new class of mesostructured semiconducting materials, M-Ge-Q (Q = S,Se) were synthesized and characterized. The materials possess an amorphous, three-dimensional framework structure in which simple adamante clusters are the basic building blocks. The application of formamide led to a hexagonally ordered pore structure and a different stoichiometry, whereas, H2O/alcohol mixtures favored disordered pore structure with worm-hole character. All compounds are wide bandgap semiconductors, the Se phases showing lower values than the sulfide analogs.
UR - http://www.scopus.com/inward/record.url?scp=0033639756&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-4095(200001)12:2<85::AID-ADMA85>3.0.CO;2-P
DO - 10.1002/(SICI)1521-4095(200001)12:2<85::AID-ADMA85>3.0.CO;2-P
M3 - Article
AN - SCOPUS:0033639756
VL - 12
SP - 85
EP - 91
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 2
ER -