Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors

T. Uchino, G. Ayre, D. C. Smith, J. L. Hutchison, C. H. De Groot, P. Ashburn

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO 2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3 108 and a steep subthreshold slope of 110 mV/decade.

Original languageEnglish
Pages (from-to)K21-K23
JournalElectrochemical and Solid-State Letters
Issue number4
StatePublished - 2011
Externally publishedYes


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