Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands

T. Uchino, K. N. Bourdakos, C. H. De Groot, P. Ashburn, M. E. Kiziroglou, G. D. Dilliway, D. C. Smith

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A metal-catalyst-free growth method of carbon nanotubes (CNTs) has been developed using chemical vapor deposition of CNTs on carbon-implanted SiGe islands on Si substrates. From scanning electron microscopy and Raman measurements, the fabricated CNTs are identified as single-walled CNTs with a diameter ranging from 1.2 to 1.6 nm. Essential parts of the substrate preparation after CVD SiGe growth and carbon implant are a chemical oxidization by hydrogen peroxide solution and a heat treatment at 1000 °C prior to CNT growth. We believe that these processes enhance surface decomposition and assist the formation of carbon clusters, which play a role in seeding CNT growth. The growth technique is a practical method of growing metal-free CNTs for a variety of applications, while at the same time opening up the prospect of merging CNT devices into silicon very-large-scale-integration technology.

Original languageEnglish
Article number233110
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number23
StatePublished - Jun 6 2005
Externally publishedYes


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