Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands

T. Uchino; K. N. Bourdakos; C. H. De Groot; P. Ashburn; M. E. Kiziroglou; G. D. Dilliway; D. C. Smith

doi:10.1063/1.1946191

Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands

T. Uchino, K. N. Bourdakos, C. H. De Groot, P. Ashburn, M. E. Kiziroglou, G. D. Dilliway, D. C. Smith

Research output: Contribution to journal › Article › peer-review

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Abstract

A metal-catalyst-free growth method of carbon nanotubes (CNTs) has been developed using chemical vapor deposition of CNTs on carbon-implanted SiGe islands on Si substrates. From scanning electron microscopy and Raman measurements, the fabricated CNTs are identified as single-walled CNTs with a diameter ranging from 1.2 to 1.6 nm. Essential parts of the substrate preparation after CVD SiGe growth and carbon implant are a chemical oxidization by hydrogen peroxide solution and a heat treatment at 1000 °C prior to CNT growth. We believe that these processes enhance surface decomposition and assist the formation of carbon clusters, which play a role in seeding CNT growth. The growth technique is a practical method of growing metal-free CNTs for a variety of applications, while at the same time opening up the prospect of merging CNT devices into silicon very-large-scale-integration technology.

Original language	English
Article number	233110
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	23
DOIs	https://doi.org/10.1063/1.1946191
State	Published - Jun 6 2005
Externally published	Yes

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10.1063/1.1946191

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title = "Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands",

abstract = "A metal-catalyst-free growth method of carbon nanotubes (CNTs) has been developed using chemical vapor deposition of CNTs on carbon-implanted SiGe islands on Si substrates. From scanning electron microscopy and Raman measurements, the fabricated CNTs are identified as single-walled CNTs with a diameter ranging from 1.2 to 1.6 nm. Essential parts of the substrate preparation after CVD SiGe growth and carbon implant are a chemical oxidization by hydrogen peroxide solution and a heat treatment at 1000 °C prior to CNT growth. We believe that these processes enhance surface decomposition and assist the formation of carbon clusters, which play a role in seeding CNT growth. The growth technique is a practical method of growing metal-free CNTs for a variety of applications, while at the same time opening up the prospect of merging CNT devices into silicon very-large-scale-integration technology.",

author = "T. Uchino and Bourdakos, {K. N.} and {De Groot}, {C. H.} and P. Ashburn and Kiziroglou, {M. E.} and Dilliway, {G. D.} and Smith, {D. C.}",

note = "Funding Information: The authors thank S. Wang for EDS measurements. They also thank the Ion Beam Center at University of Surrey for carbon ion implantation. This work was supported by EPSRC, the European Union (SINANO), and Innos Ltd. who provided access to clean room processing. One of the authors (D. C. S.) thanks EPSRC for an Advanced Research Fellowship.",

year = "2005",

month = jun,

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doi = "10.1063/1.1946191",

language = "English",

volume = "86",

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journal = "Applied Physics Letters",

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AU - Uchino, T.

AU - Bourdakos, K. N.

AU - De Groot, C. H.

AU - Ashburn, P.

AU - Kiziroglou, M. E.

AU - Dilliway, G. D.

AU - Smith, D. C.

N1 - Funding Information: The authors thank S. Wang for EDS measurements. They also thank the Ion Beam Center at University of Surrey for carbon ion implantation. This work was supported by EPSRC, the European Union (SINANO), and Innos Ltd. who provided access to clean room processing. One of the authors (D. C. S.) thanks EPSRC for an Advanced Research Fellowship.

PY - 2005/6/6

Y1 - 2005/6/6

N2 - A metal-catalyst-free growth method of carbon nanotubes (CNTs) has been developed using chemical vapor deposition of CNTs on carbon-implanted SiGe islands on Si substrates. From scanning electron microscopy and Raman measurements, the fabricated CNTs are identified as single-walled CNTs with a diameter ranging from 1.2 to 1.6 nm. Essential parts of the substrate preparation after CVD SiGe growth and carbon implant are a chemical oxidization by hydrogen peroxide solution and a heat treatment at 1000 °C prior to CNT growth. We believe that these processes enhance surface decomposition and assist the formation of carbon clusters, which play a role in seeding CNT growth. The growth technique is a practical method of growing metal-free CNTs for a variety of applications, while at the same time opening up the prospect of merging CNT devices into silicon very-large-scale-integration technology.

AB - A metal-catalyst-free growth method of carbon nanotubes (CNTs) has been developed using chemical vapor deposition of CNTs on carbon-implanted SiGe islands on Si substrates. From scanning electron microscopy and Raman measurements, the fabricated CNTs are identified as single-walled CNTs with a diameter ranging from 1.2 to 1.6 nm. Essential parts of the substrate preparation after CVD SiGe growth and carbon implant are a chemical oxidization by hydrogen peroxide solution and a heat treatment at 1000 °C prior to CNT growth. We believe that these processes enhance surface decomposition and assist the formation of carbon clusters, which play a role in seeding CNT growth. The growth technique is a practical method of growing metal-free CNTs for a variety of applications, while at the same time opening up the prospect of merging CNT devices into silicon very-large-scale-integration technology.

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ER -

Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands

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