Nanotemplated lead telluride thin films

Xiaohong Li; Iris S. Nandhakumar; George S. Attard; Matthew L. Markham; David C. Smith; Jeremy J. Baumberg

doi:10.1016/j.micromeso.2008.09.019

Nanotemplated lead telluride thin films

Xiaohong Li, Iris S. Nandhakumar, George S. Attard, Matthew L. Markham, David C. Smith, Jeremy J. Baumberg

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Direct lyotropic liquid crystalline templating has been successfully applied to produce nanostructured IV-VI semiconductor PbTe thin films by electrodeposition both on gold and n-type (1 0 0) silicon substrates. The PbTe films were characterized by transmission electron microscopy, X-ray diffraction and polarized optical microscopy and the results show that the films have a regular hexagonal nanoarchitecture with a high crystalline rock salt structure and exhibit strong birefringence. The optical absorption measurements using Fourier transform infrared spectroscopy show that the nanostructured PbTe films have a direct band gap of 0.37 eV.

Original language	English
Pages (from-to)	403-407
Number of pages	5
Journal	Microporous and Mesoporous Materials
Volume	118
Issue number	1-3
DOIs	https://doi.org/10.1016/j.micromeso.2008.09.019
State	Published - Feb 1 2009
Externally published	Yes

Keywords

Electrodeposition
IV-VI semiconductors
Nanostructured materials
Templates
Thin films

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10.1016/j.micromeso.2008.09.019

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title = "Nanotemplated lead telluride thin films",

abstract = "Direct lyotropic liquid crystalline templating has been successfully applied to produce nanostructured IV-VI semiconductor PbTe thin films by electrodeposition both on gold and n-type (1 0 0) silicon substrates. The PbTe films were characterized by transmission electron microscopy, X-ray diffraction and polarized optical microscopy and the results show that the films have a regular hexagonal nanoarchitecture with a high crystalline rock salt structure and exhibit strong birefringence. The optical absorption measurements using Fourier transform infrared spectroscopy show that the nanostructured PbTe films have a direct band gap of 0.37 eV.",

keywords = "Electrodeposition, IV-VI semiconductors, Nanostructured materials, Templates, Thin films",

author = "Xiaohong Li and Nandhakumar, {Iris S.} and Attard, {George S.} and Markham, {Matthew L.} and Smith, {David C.} and Baumberg, {Jeremy J.}",

year = "2009",

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doi = "10.1016/j.micromeso.2008.09.019",

language = "English",

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pages = "403--407",

journal = "Microporous and Mesoporous Materials",

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TY - JOUR

T1 - Nanotemplated lead telluride thin films

AU - Li, Xiaohong

AU - Nandhakumar, Iris S.

AU - Attard, George S.

AU - Markham, Matthew L.

AU - Smith, David C.

AU - Baumberg, Jeremy J.

PY - 2009/2/1

Y1 - 2009/2/1

N2 - Direct lyotropic liquid crystalline templating has been successfully applied to produce nanostructured IV-VI semiconductor PbTe thin films by electrodeposition both on gold and n-type (1 0 0) silicon substrates. The PbTe films were characterized by transmission electron microscopy, X-ray diffraction and polarized optical microscopy and the results show that the films have a regular hexagonal nanoarchitecture with a high crystalline rock salt structure and exhibit strong birefringence. The optical absorption measurements using Fourier transform infrared spectroscopy show that the nanostructured PbTe films have a direct band gap of 0.37 eV.

AB - Direct lyotropic liquid crystalline templating has been successfully applied to produce nanostructured IV-VI semiconductor PbTe thin films by electrodeposition both on gold and n-type (1 0 0) silicon substrates. The PbTe films were characterized by transmission electron microscopy, X-ray diffraction and polarized optical microscopy and the results show that the films have a regular hexagonal nanoarchitecture with a high crystalline rock salt structure and exhibit strong birefringence. The optical absorption measurements using Fourier transform infrared spectroscopy show that the nanostructured PbTe films have a direct band gap of 0.37 eV.

KW - Electrodeposition

KW - IV-VI semiconductors

KW - Nanostructured materials

KW - Templates

KW - Thin films

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DO - 10.1016/j.micromeso.2008.09.019

M3 - Article

AN - SCOPUS:57649171502

VL - 118

SP - 403

EP - 407

JO - Microporous and Mesoporous Materials

JF - Microporous and Mesoporous Materials

SN - 1387-1811

IS - 1-3

ER -

Nanotemplated lead telluride thin films

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Keywords

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