On the dechanneling of protons in Si [110]

M. Kokkoris, G. Perdikakis, S. Kossionides, S. Petrovic, E. Simoen

Research output: Contribution to journalArticlepeer-review

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Abstract

In the present work, the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E p =1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x c , which represent characteristic dechanneling rate and range, respectively, is examined, yielding the successful reproduction of backscattering spectra of channeled protons along the Si [110] crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies.

Original languageEnglish
Pages (from-to)257-263
Number of pages7
JournalEuropean Physical Journal B
Volume34
Issue number3
DOIs
StatePublished - Aug 2003
Externally publishedYes

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