Physical properties of transparent perovskite oxides (Ba,La)SnO 3 with high electrical mobility at room temperature

Hyung Joon Kim, Useong Kim, Tai Hoon Kim, Jiyeon Kim, Hoon Min Kim, Byung Gu Jeon, Woong Jhae Lee, Hyo Sik Mun, Kwang Taek Hong, Jaejun Yu, Kookrin Char, Kee Hoon Kim

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262 Scopus citations


Transparent electronic materials are increasingly in demand for a variety of optoelectronic applications, ranging from passive transparent conductive windows to active thin-film transistors. BaSnO 3 is a semiconducting oxide with a large band gap of more than 3.1 eV. Recently, we discovered that BaSnO 3 doped with a few percent of La exhibits an unusually high electrical mobility of 320cm2V -1s -1 at room temperature and superior thermal stability at high temperatures. Following that paper, here, we report various physical properties of (Ba,La)SnO 3 single crystals and epitaxial films including temperature-dependent transport and phonon properties, optical properties, and first-principles calculations. We find that almost doping-independent mobility of 200-300cm2V -1s -1 is realized in the single crystals in a broad doping range from 1.0×1019 to 4.0×1020 cm -3. Moreover, the conductivity of ∼104Ω -1cm -1 reached at the latter carrier density is comparable to the highest value previously reported in the transparent conducting oxides. We attribute the high mobility to several physical properties of (Ba,La)SnO 3: a small effective mass coming from the ideal Sn-O-Sn bonding in a cubic perovskite network, small disorder effects due to the doping away from the SnO 6 octahedra, and reduced carrier scattering due to the high dielectric constant. The observation of the reduced mobility of ∼70cm2V -1s -1 in the epitaxial films is mainly attributed to additional carrier scattering due to dislocations and grain boundaries, which are presumably created by the lattice mismatch between the substrate SrTiO 3 and (Ba,La)SnO 3. The main optical gap coming from the charge transfer from O 2p to Sn 5s bands in (Ba,La)SnO 3 single crystals remained at about 3.33 eV, and the in-gap states only slightly increased, thus, maintaining optical transparency in the visible spectral region. Based on all these results, we suggest that the doped BaSnO 3 system holds great potential for realizing all perovskite-based transparent high-temperature high-power functional devices as well as highly mobile two-dimensional electron gas via an interface control of heterostructured films.

Original languageEnglish
Article number165205
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
StatePublished - Oct 19 2012
Externally publishedYes


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