Polarization reversal and memory effect in anti-ferroelectric materials

Melvin M. Vopson; G. Caruntu; Xiaoli Tan

doi:10.1016/j.scriptamat.2016.10.004

Polarization reversal and memory effect in anti-ferroelectric materials

Melvin M. Vopson, G. Caruntu, Xiaoli Tan

Chemistry & Biochemistry

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb_0.99Nb_0.02[(Zr_0.57Sn_0.43)_0.94Ti_0.06]_0.98O₃ polycrystalline ceramic materials. This study indicates that anti-ferroelectrics encode data in their ferroelectric sublattices, resulting in a 4-state memory capable of storing 2 digital bits simultaneously. This result opens up the possibility of realizing non-volatile anti-ferroelectric random access memory, as well as other possible devices and logic applications based on anti-ferroelectric materials.

Original language	English
Pages (from-to)	61-64
Number of pages	4
Journal	Scripta Materialia
Volume	128
DOIs	https://doi.org/10.1016/j.scriptamat.2016.10.004
State	Published - Feb 1 2017

Keywords

Anti-ferroelectric memory
Antiphase domains
Electroceramics
Ferroelectric materials
Ferroelectricity

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10.1016/j.scriptamat.2016.10.004

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title = "Polarization reversal and memory effect in anti-ferroelectric materials",

abstract = "A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 polycrystalline ceramic materials. This study indicates that anti-ferroelectrics encode data in their ferroelectric sublattices, resulting in a 4-state memory capable of storing 2 digital bits simultaneously. This result opens up the possibility of realizing non-volatile anti-ferroelectric random access memory, as well as other possible devices and logic applications based on anti-ferroelectric materials.",

keywords = "Anti-ferroelectric memory, Antiphase domains, Electroceramics, Ferroelectric materials, Ferroelectricity",

author = "Vopson, {Melvin M.} and G. Caruntu and Xiaoli Tan",

note = "Funding Information: MV acknowledges that the equipment used in this work was jointly funded by the University of Portsmouth and by the HEFCE STEM teaching capital fund. XT would like to acknowledge that this work was supported by the National Science Foundation (NSF) through grant DMR-1465254 . Publisher Copyright: {\textcopyright} 2016 Acta Materialia Inc.",

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doi = "10.1016/j.scriptamat.2016.10.004",

language = "English",

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T1 - Polarization reversal and memory effect in anti-ferroelectric materials

AU - Vopson, Melvin M.

AU - Caruntu, G.

AU - Tan, Xiaoli

N1 - Funding Information: MV acknowledges that the equipment used in this work was jointly funded by the University of Portsmouth and by the HEFCE STEM teaching capital fund. XT would like to acknowledge that this work was supported by the National Science Foundation (NSF) through grant DMR-1465254 . Publisher Copyright: © 2016 Acta Materialia Inc.

PY - 2017/2/1

Y1 - 2017/2/1

N2 - A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 polycrystalline ceramic materials. This study indicates that anti-ferroelectrics encode data in their ferroelectric sublattices, resulting in a 4-state memory capable of storing 2 digital bits simultaneously. This result opens up the possibility of realizing non-volatile anti-ferroelectric random access memory, as well as other possible devices and logic applications based on anti-ferroelectric materials.

AB - A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 polycrystalline ceramic materials. This study indicates that anti-ferroelectrics encode data in their ferroelectric sublattices, resulting in a 4-state memory capable of storing 2 digital bits simultaneously. This result opens up the possibility of realizing non-volatile anti-ferroelectric random access memory, as well as other possible devices and logic applications based on anti-ferroelectric materials.

KW - Anti-ferroelectric memory

KW - Antiphase domains

KW - Electroceramics

KW - Ferroelectric materials

KW - Ferroelectricity

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DO - 10.1016/j.scriptamat.2016.10.004

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AN - SCOPUS:84991584205

SN - 1359-6462

VL - 128

SP - 61

EP - 64

JO - Scripta Materialia

JF - Scripta Materialia

ER -

Polarization reversal and memory effect in anti-ferroelectric materials

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Keywords

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