Scanning tunneling microscopy study of Cr-doped GaN surface grown by RF plasma molecular beam epitaxy

Muhammad B. Haider, Rong Yang, Hamad Al-Brithen, Costel Constantin, Arthur R. Smith, Gabriel Caruntu, Charles J. O'Connor

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations


Cr doped GaN was grown by rf N-plasma molecular beam epitaxy on sapphire (0001) at a sample temperature of 700°C, Cr/Ga flux ratio was set to a value from 5% to 20%. Subsequently, scanning tunneling microscopy was performed on these surfaces. Cr incorporates on the GaN surface at 700°C at a Cr concentration of 5% and less. By increasing the Cr/Ga flux ratio to 20% in CrGaN, linear nano structures were formed on the surface, which were not observed on the bare GaN surface. The RHEED and STM studies reveal that Cr atoms form 3×3 reconstruction when 0.1 ML of Cr was deposited at room temperature on 1×l adlayer of Ga on GaN (000-1). Cr substitutes Ga on the surface when deposited at 700°C on the MBE grown GaN (000-1) surface for all the experiments, which we have performed, provided the Cr concentration is low (∼5%).

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Number of pages6
StatePublished - 2006
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2005 Materials Research Society Fall Meeting
Country/TerritoryUnited States
CityBoston, MA


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