Supercritical chemical fluid deposition of InP and InAs

Gabriele Aksomaityte; Fei Cheng; Andrew L. Hector; Jason R. Hyde; William Levason; Gillian Reid; David C. Smith; James W. Wilson; Wenjian Zhang

doi:10.1021/cm1008812

Supercritical chemical fluid deposition of InP and InAs

Gabriele Aksomaityte, Fei Cheng, Andrew L. Hector, Jason R. Hyde, William Levason, Gillian Reid, David C. Smith, James W. Wilson, Wenjian Zhang

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Supercritical chemical fluid deposition (SCFD) from [ⁿBu ₂In(μ-E^tBu₂)₂In ⁿBu₂] precursors (E = P or As) dissolved in a homogeneous hexane/CO₂ fluid results in the growth of a thin film of InP or InAs with a thick mat of nanowires attached to the surface. InP films were well-adhered to the substrate and the nanowires can be removed without disrupting the film; however, the InAs films were poorly adhered, being dislodged simply by tapping the substrate. In many cases, the InP nanowires are single crystalline, and both the nanowires and the underlying films exhibit band-edge luminescence. Use of supercritical CHF₃ as the delivery solvent also leads to good quality InP films and reduced carbon incorporation into the films. The single-source precursor system was responsible for significant amounts of carbon. This work shows that the SCFD method may be generally applicable to the growth of compound semiconductors, with important implications for growth of these materials in confined environments.

Original language	English
Pages (from-to)	4246-4253
Number of pages	8
Journal	Chemistry of Materials
Volume	22
Issue number	14
DOIs	https://doi.org/10.1021/cm1008812
State	Published - Jul 27 2010
Externally published	Yes

Access to Document

10.1021/cm1008812

Cite this

@article{c241750e6c254060ac8fbd237d9fa793,

title = "Supercritical chemical fluid deposition of InP and InAs",

abstract = "Supercritical chemical fluid deposition (SCFD) from [nBu 2In(μ-EtBu2)2In nBu2] precursors (E = P or As) dissolved in a homogeneous hexane/CO2 fluid results in the growth of a thin film of InP or InAs with a thick mat of nanowires attached to the surface. InP films were well-adhered to the substrate and the nanowires can be removed without disrupting the film; however, the InAs films were poorly adhered, being dislodged simply by tapping the substrate. In many cases, the InP nanowires are single crystalline, and both the nanowires and the underlying films exhibit band-edge luminescence. Use of supercritical CHF3 as the delivery solvent also leads to good quality InP films and reduced carbon incorporation into the films. The single-source precursor system was responsible for significant amounts of carbon. This work shows that the SCFD method may be generally applicable to the growth of compound semiconductors, with important implications for growth of these materials in confined environments.",

author = "Gabriele Aksomaityte and Fei Cheng and Hector, {Andrew L.} and Hyde, {Jason R.} and William Levason and Gillian Reid and Smith, {David C.} and Wilson, {James W.} and Wenjian Zhang",

year = "2010",

month = jul,

day = "27",

doi = "10.1021/cm1008812",

language = "English",

volume = "22",

pages = "4246--4253",

journal = "Chemistry of Materials",

issn = "0897-4756",

publisher = "CHEMISTRY OF MATERIALS",

number = "14",

}

TY - JOUR

T1 - Supercritical chemical fluid deposition of InP and InAs

AU - Aksomaityte, Gabriele

AU - Cheng, Fei

AU - Hector, Andrew L.

AU - Hyde, Jason R.

AU - Levason, William

AU - Reid, Gillian

AU - Smith, David C.

AU - Wilson, James W.

AU - Zhang, Wenjian

PY - 2010/7/27

Y1 - 2010/7/27

N2 - Supercritical chemical fluid deposition (SCFD) from [nBu 2In(μ-EtBu2)2In nBu2] precursors (E = P or As) dissolved in a homogeneous hexane/CO2 fluid results in the growth of a thin film of InP or InAs with a thick mat of nanowires attached to the surface. InP films were well-adhered to the substrate and the nanowires can be removed without disrupting the film; however, the InAs films were poorly adhered, being dislodged simply by tapping the substrate. In many cases, the InP nanowires are single crystalline, and both the nanowires and the underlying films exhibit band-edge luminescence. Use of supercritical CHF3 as the delivery solvent also leads to good quality InP films and reduced carbon incorporation into the films. The single-source precursor system was responsible for significant amounts of carbon. This work shows that the SCFD method may be generally applicable to the growth of compound semiconductors, with important implications for growth of these materials in confined environments.

AB - Supercritical chemical fluid deposition (SCFD) from [nBu 2In(μ-EtBu2)2In nBu2] precursors (E = P or As) dissolved in a homogeneous hexane/CO2 fluid results in the growth of a thin film of InP or InAs with a thick mat of nanowires attached to the surface. InP films were well-adhered to the substrate and the nanowires can be removed without disrupting the film; however, the InAs films were poorly adhered, being dislodged simply by tapping the substrate. In many cases, the InP nanowires are single crystalline, and both the nanowires and the underlying films exhibit band-edge luminescence. Use of supercritical CHF3 as the delivery solvent also leads to good quality InP films and reduced carbon incorporation into the films. The single-source precursor system was responsible for significant amounts of carbon. This work shows that the SCFD method may be generally applicable to the growth of compound semiconductors, with important implications for growth of these materials in confined environments.

UR - http://www.scopus.com/inward/record.url?scp=77954845545&partnerID=8YFLogxK

U2 - 10.1021/cm1008812

DO - 10.1021/cm1008812

M3 - Article

AN - SCOPUS:77954845545

SN - 0897-4756

VL - 22

SP - 4246

EP - 4253

JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 14

ER -

Supercritical chemical fluid deposition of InP and InAs

Abstract

Access to Document

Other files and links

Fingerprint

Cite this