Superposition of intra- And inter-layer excitons in twistronic MoSe2/WSe2 bilayers probed by resonant Raman scattering

Liam P. McDonnell, Jacob J.S. Viner, David A. Ruiz-Tijerina, Pasqual Rivera, Xiaodong Xu, Vladimir I. Fal'ko, David C. Smith

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Hybridisation of electronic bands of two-dimensional materials, assembled into twistronic heterostructures, enables one to tune their optoelectronic properties by selecting conditions for resonant interlayer hybridisation. Resonant interlayer hybridisation qualitatively modifies the excitons in such heterostructures, transforming these optically active modes into superposition states of interlayer and intralayer excitons. For MoSe2/WSe2 heterostructures, strong hybridization of both single particle and excitonic states can occur via single particle tunnelling. Here we use resonance Raman scattering to provide direct evidence for the hybridisation of excitons in twistronic MoSe2/WSe2 structures, by observing scattering of specific excitons by phonons in both WSe2 and MoSe2. We also demonstrate that resonance Raman scattering spectroscopy opens up a wide range of possibilities for quantifying the layer composition of the superposition states of the exciton and the interlayer hybridisation parameters in heterostructures of two-dimensional materials.

Original languageEnglish
Article number035009
Journal2D Materials
Volume8
Issue number3
DOIs
StatePublished - Jul 2021
Externally publishedYes

Keywords

  • Heterobilayers
  • Hybridised excitons
  • Resonance Raman spectroscopy
  • Transition metal dichalcogenides

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