Abstract
An amine-elimination pathway has been used to produce two new hafnium compounds starting from the tetrakis(dimethylamido)hafnium(IV) complex and an amine-bis[(Z)-4-(2,6-dimethylphenylamino)pent-3-en-2-one]bis(dimethylamido) hafnium(IV) and [(Z)-4-(4-methylphenylamino)pent-3-en-2-one]bis(dimethylamido) hafnium(IV). The resulting complexes were characterized by single crystal X-ray diffraction and NMR. In addition, their volatilities were studied by thermogravimetric analysis (TGA), where [(Z)-4-(4-methylphenylamino)pent-3-en-2- one]bis(dimethylamido)hafnium(IV) showed better properties for MOCVD applications with a ΔHsub of 27 kJ/mol and a Tsub of 104 °C.
Original language | English |
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Pages (from-to) | 60-65 |
Number of pages | 6 |
Journal | Inorganica Chimica Acta |
Volume | 396 |
DOIs | |
State | Published - Feb 24 2013 |
Keywords
- Hafnium compounds
- High-κ dielectric
- Metal-organic chemical vapor deposition (MOCVD)
- Sublimation enthalpy
- Thermogravimetric analysis (TGA)
- Volatility