Synthesis of hafnium(IV) β-ketoiminates as potential precursors for the MOCVD of HfO2

Diego González-Flores, Siddappa A. Patil, Phillip A. Medina, Seth Dever, Chananate Uthaisar, Leslie W. Pineda, Mavis L. Montero, Joseph W. Ziller, Bradley D. Fahlman

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

An amine-elimination pathway has been used to produce two new hafnium compounds starting from the tetrakis(dimethylamido)hafnium(IV) complex and an amine-bis[(Z)-4-(2,6-dimethylphenylamino)pent-3-en-2-one]bis(dimethylamido) hafnium(IV) and [(Z)-4-(4-methylphenylamino)pent-3-en-2-one]bis(dimethylamido) hafnium(IV). The resulting complexes were characterized by single crystal X-ray diffraction and NMR. In addition, their volatilities were studied by thermogravimetric analysis (TGA), where [(Z)-4-(4-methylphenylamino)pent-3-en-2- one]bis(dimethylamido)hafnium(IV) showed better properties for MOCVD applications with a ΔHsub of 27 kJ/mol and a Tsub of 104 °C.

Original languageEnglish
Pages (from-to)60-65
Number of pages6
JournalInorganica Chimica Acta
Volume396
DOIs
StatePublished - Feb 24 2013

Keywords

  • Hafnium compounds
  • High-κ dielectric
  • Metal-organic chemical vapor deposition (MOCVD)
  • Sublimation enthalpy
  • Thermogravimetric analysis (TGA)
  • Volatility

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